Nano-technology developers have been able to make a device from nanostructures to generate electric currents, electromagnetic fields, even able to issue the order of subatomic radiation. Device / Nano-sized devices capable of generating electrical energy are referred to as Nano generator.
Georgia Institute of Technology, they are developing a prototype Nano generator that uses Nano yarn structure (nanowire) to generate electricity when the wire vibrates in Nano size. Nanowire on the prototype made of ZnO (zinc oxide), currents arising from the nanowire is as of the piezoelectric effect (the onset of electrical properties due to changes in mechanical energy of the material). The design of the Nano generator until now is still the object of research and still be in development stage. Scientists predict that Nanogenarator will be introduced to the public about the years 2010-2011.
Until now the majority of the portable electronic devices (e.g. watches, etc.), energy is still very dependent on the battery. Currently scientists are developing and demonstrating how an electronic device is easy and practical in its energy supply. This can be realized by the method of yarn developer’s technology Nano (nanowire) from cheap materials (ZnO) which can produce sufficient mechanical energy to be converted into electrical energy.
How electricity is produced from the Nano wire
Prof. Zhong Lin Wang of Georgia Tech illustrates that when we walk, then the electric power generated approximately by our body is 67 watts, we jari2 movement result 0.1 watt, 1 watt of our breathing. Well if we are able to convert a fraction of the power, then our bodies can be a source of energy for an electronic device. Conceptually continued Prof. Zhong Lin Wang, he was able to demonstrate power conversion is possible for a device reaches 17-30 percent of the total power generated by our bodies.
Results of research at the research group of Prof. Zhong Lin Wang can confirm a theory that: ZnO nanowire will show excellent piezoelectric effect, which produces the electrical properties of the response to mechanical stress. Usually negative and positive charge of zinc and oxygen ions in ZnO nanowire crystals cancels each other. But when the wire is chemically grown on the surface of the electrode, wire is bent due to external vibrations from the tip of the Nano-scale. The tip is a tip of atomic force microscopy (AFM) made of silicon (Si) coated with platinum (Pt). Bending of the ZnO nanowire lead to the occurrence of an electric dipole in a nanowire.
In the compressed negatively charged while the expansion positively charged. That is because the Zn2 + and the negative pole as a result of O-2. So with the metal contacts the semiconductor results in Schotcky rectification bridge the gap as in the positive and negative type semiconductor (pn junction). Contacts between the AFM tip with a positively charged pole is called the forward and reverse biased AFM tip with the negative pole is called reverse bias.
In the state of forward bias electrons will easily flow into the metal opposite the reverse bias electrons will have trouble. This phenomenon may be illustrated by the graph the relationship between voltage and current in the diode, whereas its transport mechanism can be easily illustrated by looking at the energy diagram between the metal and semiconductor. Figure 1 (a) and 1 (b) is a form of ZnO nanowire and the phenomenon of electric currents generated by contact metal and semiconductor.
Georgia Institute of Technology, they are developing a prototype Nano generator that uses Nano yarn structure (nanowire) to generate electricity when the wire vibrates in Nano size. Nanowire on the prototype made of ZnO (zinc oxide), currents arising from the nanowire is as of the piezoelectric effect (the onset of electrical properties due to changes in mechanical energy of the material). The design of the Nano generator until now is still the object of research and still be in development stage. Scientists predict that Nanogenarator will be introduced to the public about the years 2010-2011.
Until now the majority of the portable electronic devices (e.g. watches, etc.), energy is still very dependent on the battery. Currently scientists are developing and demonstrating how an electronic device is easy and practical in its energy supply. This can be realized by the method of yarn developer’s technology Nano (nanowire) from cheap materials (ZnO) which can produce sufficient mechanical energy to be converted into electrical energy.
How electricity is produced from the Nano wire
Prof. Zhong Lin Wang of Georgia Tech illustrates that when we walk, then the electric power generated approximately by our body is 67 watts, we jari2 movement result 0.1 watt, 1 watt of our breathing. Well if we are able to convert a fraction of the power, then our bodies can be a source of energy for an electronic device. Conceptually continued Prof. Zhong Lin Wang, he was able to demonstrate power conversion is possible for a device reaches 17-30 percent of the total power generated by our bodies.
Results of research at the research group of Prof. Zhong Lin Wang can confirm a theory that: ZnO nanowire will show excellent piezoelectric effect, which produces the electrical properties of the response to mechanical stress. Usually negative and positive charge of zinc and oxygen ions in ZnO nanowire crystals cancels each other. But when the wire is chemically grown on the surface of the electrode, wire is bent due to external vibrations from the tip of the Nano-scale. The tip is a tip of atomic force microscopy (AFM) made of silicon (Si) coated with platinum (Pt). Bending of the ZnO nanowire lead to the occurrence of an electric dipole in a nanowire.
In the compressed negatively charged while the expansion positively charged. That is because the Zn2 + and the negative pole as a result of O-2. So with the metal contacts the semiconductor results in Schotcky rectification bridge the gap as in the positive and negative type semiconductor (pn junction). Contacts between the AFM tip with a positively charged pole is called the forward and reverse biased AFM tip with the negative pole is called reverse bias.
In the state of forward bias electrons will easily flow into the metal opposite the reverse bias electrons will have trouble. This phenomenon may be illustrated by the graph the relationship between voltage and current in the diode, whereas its transport mechanism can be easily illustrated by looking at the energy diagram between the metal and semiconductor. Figure 1 (a) and 1 (b) is a form of ZnO nanowire and the phenomenon of electric currents generated by contact metal and semiconductor.
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